一种SiGe低噪声放大器测试基座的研究

Development of a Test System with a Plug-in-Unit for SiGe LNA

对SiGe低噪声放大器(LNA)的测试技术进行了探索,开发出适合SiGe低噪声放大器的可插拔测试基座。通过对商业样品的增益G(S21)、增益平坦度、带宽、回波损耗(S11和S22)、反向隔离度(S12)1、dB压缩点(P1dB),三阶互调节点(IP3)和噪声系数(NF)等参数的测试,验证了测试系统的准确性。对所开发的单片SiGe低噪声放大器进行了测试,获得了准确的测试数据,准确表征了SiGe低噪声放大器的性能。

An investigation was made into test techniques for SiGe low noise amplifiers （LAN＇s）. A test system with a plug-in-unit for SiGe LNA＇s was developed, and the accuracy of the test system was verified by testing parameters of a commercial sample circuit, such as gain G （S21）, gain flatness, bandwidth, echo return loss （S11 and S22）, reverse isolation （S12）, 1 dB compresion point （P1dB）, 3rd-order intermodulation point （IP3）and noise figure （NF）. A monolithic SiGe low noise amplifier was tested, and accurate test data were obtained, which correctly characterize the performance of the SiGe low noise amplifier.