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一种带功率检测的TD-SCDMA锗硅功率放大器 被引量：2

An SiGe Power Amplifier with Power Detector for TD-SCDMA Application
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摘要 设计了一个用于TD-SCDMA的锗硅异质结双极晶体管(SiGe HBT)功率放大器。该放大器使用3.3 V电源,内部实现了包括级间匹配网络等的全电路片上集成。对于码分多址环境,功率放大器提供28 dBm的功率输出,实现34.8%的功率附加效率(PAE),另外,在28 dBm的输出功率下,邻道功率泄漏比(ACPR)小于-35 dBc。该功率放大器同时包括动态控制偏置电路和完全集成的功率检测器。 An SiGe HBT power amplifier for time division synchronous code-division multiple-access （TD-SCD- MA） application is described. Operating from a single positive 3.3 V supply, the amplifier has a fully integrated onchip input and interstage matching network. For the code-division multiple-access environment, the power amplifier delivers 28 dBm power output and provides power-added efficiency （PAE） of 34. 8% and an adjacent channel power ratio （ACPR） less than -35 dBc at 28 dBm. The power amplifier contains dynamic control bias circuits and a fully integrated power detector.
作者 胡庆钟 刘志弘 严利人 周卫
机构地区 清华大学微电子学研究所
出处 《微电子学》 CAS CSCD 北大核心 2006年第5期584-587,共4页 Microelectronics
关键词 功率放大器 锗硅 功率检测 TD-SCDMA Power amplifier SiGe Power detector TD-SCDMA
分类号 TN722.16 [电子电信—电路与系统] TN402 [电子电信—微电子学与固体电子学]
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参考文献12

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共引文献4

同被引文献15

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微电子学
2006年 第5期

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