基于1.5μm BiCMOS工艺的SiGe HBT器件设计优化

Design Optimization of SiGe/Si HBT Based on 1.5μm BiCMOS Technology

基于非选择性外延,自对准注入技术,集电区选择性注入和快速热退火工艺,提出了一种适用于1.5μm BiCMOS集成技术的SiGe HBT器件结构。该结构具有内基区薄,外基区厚,B/E结两侧杂质浓度低,发射极/基极自对准诸优点。利用TSuprem4和Medici进行工艺模拟和电学特性仿真。结果表明,所设计的的SiGe HBT具有良好的电学特性,其最大电流增益为210,当Vce=2.5 V时,截止频率达到65 GHz,验证了器件结构设计的合理性。

Based on non-selective epitaxy, self-aligned implantation, selectively-implanted collector （SIC）and rapid thermal annealing （RTA）, a SiGe HBT structure with thin internal base, thick external base, low-doped B/E junction and self-aligned emitter/base is presented based on 1.5μm BiCMOS technology. Simulations were made on the proposed SiGe HBT＇s using TSuprem4 and Medici. Results show that a maximum current gain of 210 and a cutoff frequency of 65 GHz have been achieved for the device, which validates the design of the proposed structure.