半导体功率放大激光器耦合效率的研究

Study on the Coupling of Laser with Semiconductor Power Amplification

通过对波长808nm的GaA lAs/GaAs半导体功率放大激光器端面镀SiO减反射膜工艺过程,从理论和实验上分析了其涂层特性,透射率由无膜时的69%和32.6%提高到镀膜后的90%和80%以上,提高器件的耦合效率、输出光功率和工作寿命。

The properties of coatings have been analysed theoretically and experimentally throughout the deposition process of SiO antireflection films on facets of GaAlAs/GaAs laser with semiconductor power amplification, and with a wavelength of 808 nm. The transmissivities of cavity faces have been increased from 69% and 32.6% without coatings to above 90% and 80% with coatings. The coupling efficiency of device, output power of laser and operating lifetime have been improved.