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AlGaN势垒层应变弛豫度对高Al含量Al_xGa_(1-x)N/GaN HEMT性能的影响 被引量：1

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摘要 采用数值算法自洽求解Poisson和Schrdinger方程,计算了AlGaN势垒层的应变弛豫度对高Al含量AlGaN/GaN高电子迁移率晶体管(HEMT)中的导带结构、电子浓度以及二维电子气(2DEG)薄层电荷密度的影响.利用所获得的精确薄层电荷密度与栅电压的关系,采用非线性电荷控制模型解析求解了应变弛豫度对AlxGa1-xN/GaNHEMT直流输出特性的影响.计算表明,应变弛豫度为0时所获得的Al0.50Ga0.50N/GaNHEMT的最大二维电子气薄层电荷密度为2.42×1013cm-2,最大漏电流为2482.8mA/mm;应变弛豫度为1时所获得的最大二维电子气薄层电荷密度为1.49×1013cm-2,最大漏电流为1149.7mA/mm.模拟结果同已有的测试数据相比,符合较好.对模拟结果的分析表明,对高Al含量的AlGaN/GaNHEMT进行理论研究时需要考虑应变弛豫度的影响,减小AlGaN势垒层的应变弛豫度可显著提高器件的性能.
作者 杨燕 郝跃 张进城 王冲 冯倩
机构地区 西安电子科技大学微电子学院宽禁带半导体材料与器件教育部重点实验室
出处 《中国科学（E辑）》 CSCD 北大核心 2006年第9期925-932,共8页 Science in China(Series E)
基金 国家重大基础研究项目(973)(批准号:51327020301) 国防预先研究项目(批准号:41308060106)资助
关键词 ALGAN/GAN 高电子迁移率晶体管 应变弛豫度
分类号 TN386 [电子电信—物理电子学]
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参考文献11

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同被引文献44

  • 1刘键,李诚瞻,魏珂,和致经,刘果果,郑英奎,刘新宇,吴德馨.具有低欧姆接触电阻的高性能AlGaN/GaN HEMT器件研制[J].Journal of Semiconductors,2006,27(z1):262-265. 被引量：1
  • 2李娜,赵德刚,杨辉.AlGaN/GaN异质结中极化效应的模拟[J].中国科学（G辑）,2004,34(4):422-429. 被引量：5
  • 3Zainuriah Hassan, Fong Kwong Yam, Yan Cheung Lee, et al. Effects of post annealing treatments on the characteristics of ohmic contacts on n-type A1GaN [J]. SPIE, 2005,5739: 169.
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  • 5G Vanko,T Lalinsk), z. Mozolovd, et al. Nb-Ti/A1/Ni/ Au based ohmic contacts to A1GaN/GaN[J]. Vacuum, 2007,82(2) : 193 - 196.
  • 6S Kaciulis, L Pandolfi, S Viticoli, et al. Characterization of Ohmic contacts on GaN/A1GaN heterostructures[J ]. Applied Surface Science, 2006,253(3) :1055 - 1064.
  • 7Deepak Selvanathan, Fitih M Mohammed, Jeong-Oun Bae, et al. Investigation of surface treatment schemes on n-type GaIN and A10.20Ga0.80N [J]. Journal of Vacuum Science Technology B, 2005, 23(6) :2538 - 2544.
  • 8J A Bardwell, G I Sproule, Y Liu, et al. Comparison of two different Ti/A1/Ti/Au ohmic metallization schemes for AlGaN/GaN [J ]. Journal of Vacuum Science Technology B, 2002, 20(4) :1444 - 1447.
  • 9Alexei Vertiatchikh, Ed Kaminsky, Julie Teetsov, et al. Structural properties of alloyed Ti/A1/Ti/Au and Ti/A1/ Mo/Au ohmic contacts to AIGaN/GaN [ J ]. Solid-State Electronics, 2006(7/8) : 1425 - 1429.
  • 10M A Miller, S-K Lin, S E Mohney. V/A1/V/Ag contacts to n-GaN and n-AIGaN [ J ]. Journal of Applied Physics, 2008,104 (6) : 4508.

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中国科学（E辑）
2006年 第9期

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