摘要
用低压ＭＯＶＰＥ方法研制出了波长为６５５ｎｍ与６７０ｎｍ的ＧａＩｎＰ－ＡｌＧａＩｎＰ半导体量子阱可见光激光器，并已形成一定的批量生产能力。器件的阈值电流典型值为４５ｍＡ，输出光功率不小于５ｍＷ，最高工作温度不低于５０℃，预计２０℃时寿命接近１００，０００小时，主要技术指标与目前进口的同类产品水平相当，完全可以满足实用要求。
GaInP-AIGalnP quantum well visible laser diode with wavelength of 655nm and 670nm was successfully developed. The typical threshold current of the laser diode is about 45mA (25℃, CW). The maximum output optical power is not less than 5mW (25℃, CW) and the highest lasing temperature is more than 94℃ for 658nm laser diode and more than 100℃ for 670nm laser diode. The life time of the visible laser diode is nearly 100, 000 hours at 20℃.
出处
《高技术通讯》
CAS
CSCD
1996年第11期1-3,共3页
Chinese High Technology Letters
基金
863计划
