摘要
报导了脊形波导ＩｎＧａＡｓ／ＧａＡｓ／ＡｌＧａＡｓ应变量子阱激光器的特性和实验结果。激光器阈值电流最低为９ｍＡ，典型值为１５ｍＡ，线性输出光功率大于１２０ｍＷ，微分量子效率典型值为６０％（镀高反膜和增透膜），５０℃、８０ｍＷ恒定功率条件下老化实验结果表明：该条件下激光器寿命超过１０００小时。
This paper reports the characteristics of the ridge waveguide InGaAs/GaAs strained layer quantum well lasers. The lowest threshold current of lasers is 9mA, the typical value is 15mA, the linear output power is larger than 120mW, and the typical differencial quantum efficiency is 60% (coated lasers). At the temperature of 50℃ and the constant out power of 80mW, the aging time of the lasers is longer than 1000hours.
出处
《高技术通讯》
CAS
CSCD
1996年第11期4-6,共3页
Chinese High Technology Letters
基金
863计划
