利用量子阱部分无序技术实现的激光器／调制器腔内集成

Monolithic Integration of a Laser and an Intracavity Modulator Using Quantum Well Partial Disordering

利用选择性部分无序技术获得了单片外延片上不同区域的多量子阱在结构与性质上的差异。在国内首次利用该法处理的外延片制作了脊波导结构激光器／调制器集成器件，实现了调制器单元对输出光强的调制。在５．６Ｖ调制电压下获得了大于２０ｄＢ的消光比。

The differences in the structures and properties of multiple quantum well between different areas on a wafer were achieved using selective partial disordering. The first ridged-waveguide integrated laser/modulator in China was fabricated with this method. The output light power of the integrated device was controlled by the modulation unit. An extinction ratio better than 20dB was obtained at a reverse bias of 5.6V.