X波段单片低噪声放大器的设计

Design of an X Band MMIC LNA

研究了微波PHEMT(假晶型高电子迁移率晶体管)的非线性模型提取技术和CAD设计优化技术,采用3级放大的拓扑结构,设计了输入、级间和输出匹配网络以及偏置电路和拓扑结构,在尽可能小的尺寸上实现了工作频率范围为9 GHz^11 GHz、增益大于33.9 dB、噪声小于0.75 dB、输入输出驻波比小于1.3、输入输出端口均匹配到50Ω标准阻抗的单片集成电路,具有小型化、低噪声、高增益、低成本、高可靠性的特点。

This paper studies extraction method of nonlinear model and optimization technique of CAD design for MMIC LNA in depth. We use three-stage amplification circuit topology structure. Matching circuit, bias circuit and topology structure are all designed. It achieves low noise and high gain with as small-size as possible and ensures minimization of gate dimension and as high-linearity as possible.