摘要
讨论了反激电源设计的另外一个方面,即MOSFET场效应管的选择和功耗验证,提出了相应的计算公式与验证流程。该思想也可用于其它电路设计中的MOSFET检验。
Based on completion of the design of switching converter main circuit,this paper mainly discusses about MOSFET choosing and introduces power dissipation validation of MOSFET,including four aspects of power dissipation in heat management i.e.conduction losses,switching losses,gate charge losses and off-state leakage current losses.The paper supplies formula (5), (10), (12), (14) for calculating those losses and introduces a process for consumption validation of MOSFET.The process also can be used in other electronic design.
出处
《电力电子技术》
CSCD
北大核心
2006年第5期107-109,共3页
Power Electronics