摘要
报导了由选择氧化法研制的ＧａＡｓ／ＡｌＧａＡｓ垂直腔面发射激光器，ＤＢＲ中的ＡｌＡｓ经选择氧化形成的氧化层作为有源区的横向电流限制层，器件的最低阈值电流为３．８ｍＡ，输出功率大于ｌｍＷ，发散角小于７．８°，高频测量脉冲上升沿达１００ｐｓ，并由此器件制成了２×３二维列阵。
We report the GaAs/AlIGaAs vertical-cavity surface-emitting semiconductor lasers 2-D arraysfabricated by the selective oxidation. The current aperture is formed by the buried oxide layers withinmonolithic distributed Bragg reflectors. The lowest threshold 3. 8mA is achieved with a 4μm square activeregion and a continuous-wave at room temperature. The maximum outpower is great than 1mW. Itsdivergence angle is less than 7. 8° and the pulse rise time is less than 100ps when measured at highfrequency, a 2 × 3 2-D arrays is obtained.
出处
《高技术通讯》
CAS
CSCD
1996年第5期48-50,共3页
Chinese High Technology Letters
基金
863计划资助
