摘要
为了用尽可能低的辐照电子能量在光纤芯处形成大的性质改变,模拟了0．1～1 MeV能量的电子辐照二氧化硅。发现每一特定能量的电子辐照二氧化硅时,在其中有个能量沉积最快的位置。计算得到0．447 4 MeV能量的电子在单模光纤中心能量沉积最快,分析发现对于这个能量的电子多数可以穿透到光纤芯处,电子能量在光纤芯处的沉积主要是由于电子能量的减小造成的。这些结果可为用电子辐照光纤制作光器件时的初始电子能量选择提供参考。
In order to make larger character transformation of the fiber core with smaller electron irradiation, electrons with energy of 0. 1-1 MeV irradiation SiO2is simulated. It is found that there is a position in SiO2 with the fastest energy deposition speed for the electrons with fixed energy. Calculation find that electrons with energy of 0. 447 4 MeV have the fastest energy deposition speed at the fiber core by analysis we also find that most electrons with that energy could reach the fiber core, while energy deposition is due to the energy decrease. These results might be some references for the choice of the primary electron energy using electron irradiation technique to fabricate optical fiber devices.
出处
《光学与光电技术》
2006年第5期55-58,共4页
Optics & Optoelectronic Technology
关键词
石英光纤
电子辐照
能量沉积
quartz fiber
electron irradiation
energy deposition
