GaAlAs半导体功率放大激光器耦合效率的研究

Study on Coupling Efficiency of Laser with GaAlAs Semiconductor Power Amplification

通过对波长808nm的GaAIAs／GaAs半导体功率放大激光器端面镀ZrO2减反射膜工艺过程,从理论和实验上分析了涂层特性,透射率由无膜时的69％和32．6％提高到镀膜后的90％和80％以上,提高器件的耦合效率、输出光功率和工作寿命。

The properties of coatings are analyzed theoretically and experimentally throughout the deposition process of ZrO2 antireflection films on facets of GaAIAs/GaAs laser with semiconductor power amplification for the wavelength of 808 nm . The transmissivities of cavity faces are increased from 69 % and 32. 6% without coatings to above 90% and 80% with coatings. The coupling efficiency of device , output power of laser and operating lifetime are improved.