基于CMOS工艺的一种低功耗高增益低噪声放大器

A Low Power High Gain CMOS Low Noise Amplifier

采用0.18μm CMOS工艺,两级共源结构实现了低功耗高增益的低噪声放大器设计。共源结构的级联采用电流共享技术,从而达到低功耗的目的。电路的输入端采用源极电感负反馈实现50Ω阻抗匹配,同时两级共源电路之间通过串联谐振相级联。该LNA工作在5.2 GHz,1.8 V电源电压,能提供20 dB的增益(S21为20 dB),而噪声系数为1.9 dB,输入匹配较好,S11为-32 dB。

A 5.2 GHz high gain LNA has been implanted in a 1.8 V 0.18 μm CMOS process. The LNA is a current sharing two - stage cascade amplifier adopting a series inter - stage resonance. The amplifier employs inductive source degeneration to generate 50Ω input match. The amplifier provide a forward gain （S21）of 20 dB with a noise figure of 1.9 dB. The input match （S11） is-32 dB.