摘要
阐明了负电子亲和势Ⅲ-Ⅴ族化合物半导体光电阴极的卓越光电性能,论述了关于其物理机制的四种理论模型见解,介绍了阴极材料生长技术和制作工艺以及拓展的应用领域并展望了趋势和前景。
The negative electron affinity Ⅲ-Ⅴ compound photocathodes with greatly advanced photoelectricity performance are described.Four sorts of theory model about physical mechanism are reviewed.The cathode material growing technique and manufacturing protess, as well as its applications are introduced,The developing trends and future prospects are also addressed.
出处
《半导体情报》
1996年第6期17-22,共6页
Semiconductor Information
关键词
负电子亲和势
光电阴极
化合物半导体
s: Nagative electron affinity,Photo-cathode,Field-assisted photo-cathode,Quantum efficiency,Threshold wavelength