利用扫描电子显微镜改进GaAs　MESFET背面通孔电镀工艺

Improve Via Holes and Plating of GaAs MESFET Using Scanning Electron Microscope

利用扫描电子显微镜对ＧａＡｓＭＥＳＦＥＴ背面通孔形貌及电镀状况进行了分析，并对电镀工艺进行了改进。给出了大量改善前后的电镜照片图形。

An analysis on the shapes of via holes and situation of electroplating of GaAs MESFET using scanning electron microscope is introduced.The plating process has been improved.Many photos before and after improvement are presented.