1550nm偏振不灵敏半导体光放大器的研制

Fabrication and Characterization of 1550 nm Polarization-Insensitive Semiconductor Optical Amplifiers

研制了有源区为InGaAs张应变体材料的1.55μm偏振不灵敏半导体光放大器(SOA)。采用束传播法计算了偏离镜面垂直方向7°的埋层波导结构模式场分布,并用平面波展开法设计了多层抗反射膜,在TE模和TM模反射率同时小于10-4时膜厚允许误差为3%。对放大自发发射谱(ASE)和增益谱的分析表明,他们具有基本一致的偏振灵敏度。对一腔长800μm的SOA在注入电流250 mA时,测量得出TE模和TM模的ASE谱偏振灵敏度小于0.5 dB,增益谱3 dB带宽为63 nm,1 550 nm处光纤到光纤增益为11.9 dB,3 dB饱和输出功率为5.6 dB,在1 570 nm处的噪声指数为7.8 dB。而一腔长1 000μm SOA耦合封装后得到的最大增益为15 dB。

A 1. 55 μm polarization-insensitive semiconductor optical amplifier （SOA） was fabricated with the active region of InGaAs tensile-strained bulk material. Beam propagation method and plane wave expanding method are used to calculate the mode field profile and the mode reflectivity. For the SOA with the buried waveguide deviated 7° from the normal direction, the thickness tolerance of the mirror is 3% when the reflectivities of TE mode and TM mode are less than 10^-4 simultaneously. The analysis also shows that the polarization sensitivity of the amplified spontaneous emission（ASE） spectra is agreement with that of the gain spectra. For a SOA with cavity length of 800 μm at the injection current of 250 mA,the polarization sensitivity of ASE spectra is less than 0.5 dB,the correspond- ing fiber-to-fiber gain is 11.9 dB at 1 550 nm with the 3 dB bandwidth of 63 nm,and the saturation output power is 5.6 dBm. The noise figure is 8.8 and 7.8 dB at 1550 and 1570 nm. For a packaged SOA with cavity length of 1 000 μm,the fiber-to-fiber gain is 15 dB at the injection current of 190 mA.