巨正则法对硅半导体中载流子数的计算机模拟

Computer Simulation of the Carrier Number in Silicon Semiconductor with Grand Canonical Ensemble Method

将巨正则系综的Fermi-Dirac(F-D)统计法与计算机模拟相结合,从本征半导体硅出发,探讨温度和光照能量对载流子数的影响,试图从理论上定量分析太阳能电池工作状况,对本征硅半导体中载流子数进行计算机模拟,模拟结果与理论规律基本吻合,此方法可为进一步研究掺杂半导体及氧化物半导体空间电荷层载流子数提供参考。

This paper models the carrier numuer in grand canonical ensemble and Fermi-Dirac statistical distributions. The simulation result shows that： the quantity of carrier enlarges with light energy increasing; the quantity of carrier increases when temperature goes up, but decreases with forbidden band getting wider. The result is coincident with practice. We may take this result as theoretical basis of doping semiconductor.