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ULSI制备中铜布线化学机械抛光技术的研究与展望 被引量：2

Research and Prospects on Copper Chemical Mechanical Polishing in ULSI Manufacturing
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摘要 对ULSI制备中铜布线化学机械抛光(CMP)进行了分析,综述了铜CMP技术的研究现状.主要内容包括铜CMP去除机理、铜CMP抛光液;分析了目前铜CMP技术存在的问题,指出了铜CMP今后的研究重点. The copper chemical mechanical polishing （CMP） which is the key planarization technology for ULSI manufacturing was discussed, and the progress and problems of CMP were reviewed in the paper. The material removal mechanisms and the slurry of copper CMP were analyzed especially. The emphases of the future research were also pointed out.
作者 王胜利 刘玉岭
机构地区 河北工业大学微电子研究所
出处 《河北工业大学学报》 CAS 2006年第5期17-22,共6页 Journal of Hebei University of Technology
关键词 化学机械抛光 铜 去除机理 抛光液 chemical mechanical polishing （CMP） copper removal rate slurry
分类号 TU528 [建筑科学—建筑技术科学]
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参考文献49

  • 1Wijekoon Kappila. IEEE/SEMI Advanced Semiconductor Manufacturing Conference [C]. 1998: 354.
  • 2Kaufman F B, Thompson D B, Broadie R E, et al. Chemical mechanical polishing for fabricating patemed W metal features as chip interconnects[J]. Journal of the Elec~ochemical Society, 1991, 138 (11) : 3 460-3 465.
  • 3Malik F, Hasan M. Manufacturability of the CMP process [J]. Thin Solid Films, 1995, 270: 612-615.
  • 4Jairath R, FarkasJ, HuangC K, etal. Chemical mechanicalpolishing: process manufacturability [J]. Solid State Technology, 1994, 7: 71-75.
  • 5Hahn P O. The 300 mm wafer-a cost and technology challenge [J]. Microelectronic Engineering, 2001, 56 (1-2): 3-13.
  • 6Preston F W. The theory and design of plate glass polishing machines [J]. J Soc Glass Tech, 1927, 11 : 214-256.
  • 7Warnock J. A two-dimensional process model for chemomechanical polishing planarization [J]. Journal of the Electrochemical Society, 1991, 138(8) : 2 398-2 402.
  • 8Sundararajan S, Thakurta D G, Schwendeman D W, et al. Two-dimensional wafer-scale chemical mechanical planarization models based on lubrication theory and mass transport [J]. Journal of the Electrochemical Society, 1999, 146 (2) : 761-766.
  • 9Runnels S R, Eyman L M. Tribolony analysis of chemical mechanical polishing [J]. Journal of the Electrochemical Society, 1994, 141 (6) :1 698-1 701.
  • 10Liu C W, Dai B T, Tseng W T, et al. Modeling of the wear mechanical during chemical mechanical polishing [J]. Journal of the Electrochemical Society, 1996, 143 (2): 716-721.

同被引文献23

  • 1李秀娟,金洙吉,苏建修,康仁科,郭东明.铜布线化学机械抛光技术分析[J].中国机械工程,2005,16(10):896-901. 被引量：5
  • 2陈杨,陈志刚,李霞章,陈爱莲.硅晶片化学机械抛光材料去除机制与模型[J].润滑与密封,2006,31(4):119-122. 被引量：4
  • 3何俊,于萍,罗运柏.铜缓蚀剂的研究现状与进展[J].材料保护,2006,39(4):42-47. 被引量：17
  • 4陈瑜,夏明珠,雷武,张曙光,王风云.苯骈三氮唑及其羧基烷基酯衍生物缓蚀性能的量子化学研究[J].材料保护,2006,39(7):4-8. 被引量：16
  • 5S Seal,SC Kuiry,B Heinmen.Effect of glycine and hydrogen peroxide on chemical–mechanical planarization of copper[].Thin Solid films.2003
  • 6D. Josell,J. E. Bonevich,T. P. Moffat,T. Aaltonen,M. Ritala,M. Leskela.Iridium Barriers for Direct Copper Electrodeposition in Damascene Processing[].Electrochemical and Solid State Letters.2006
  • 7Esta Abelev,Andrew Jonathan Smith,Achim Walter Hasse,Yair Ein-Eli.Potassium sorbate solutions as copper chemical mechanical planarization (CMP) based slurries[].Electrochimica Acta.2007
  • 8Lee Woo-Jin,Park Hyung-Soon.Development of novelprocess for Ru CMP using ceric ammonium nitrate (CAN)-containing nitric acid[].Applied Surface Science.2004
  • 9Kim N H,Lim J H,Kim S Y,et al.Effects of phosphoric acid stabilizer on copper and tantalum nitride CMP[].Materials Letters.2003
  • 10Moffat T P,Walker M,Chen P J,et al.Electrodeposition of Cuon Ru Barrier Layers for Damascene Processing[].Journal ofthe Electrochemical Society.2006

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河北工业大学学报
2006年 第5期

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