摘要
研究了纳米A l2O3第2相掺杂对Ce0.8Y0.2O2-δ固体电解质晶界离子电导率的影响。结果发现,掺杂少量纳米A l2O3可降低固体电解质的晶界电导活化能,中低温下的晶界离子电导率显著上升。分析表明,掺杂第2相在晶界处的偏聚改善了晶界的离子导电通道结构,是导致晶界离子电导率上升的主要原因。
The effect of nano-Al2O3 doping on the grain boundary (GB) conductivity of polycrystalline Ce0.8Y0.2O2-δ was investigated. It was found that the addition of Al2O3 leads to a decrease in GB activation energy, and an increase in the GB conductivity at low and moderate temperatures obviously. The results indicate that the effect is attributed to the improvement of oxygen-ion migration structure in the grain boundary due to the doping of A1203.
出处
《应用化学》
CAS
CSCD
北大核心
2006年第9期978-981,共4页
Chinese Journal of Applied Chemistry
基金
贵州省科技厅自然科学基金项目(黔科合J字(2005)2091号)