Al-C-Ni组分的变化对Al-C-Ni与ITO层接触电阻的影响(英文)

Effects of Al-C-Ni Composition Changes on Contact Resistance Between Al-C-Ni and ITO Layer

为克服大尺寸显示面板中反应时间的延迟问题,采用低阻栅线是十分有益的,同样在小尺寸面板上也存在这种相互匹配的过程。然而,由于Al较高的氧化速度,铝合金和ITO材料接触性能并不太好。文章介绍了在室温ITO沉积过程中,通过增加ACX(Al-C-Ni)中Ni含量来减少ACX-ITO接触电阻。经室温ITO沉积后,接触电阻成功地减少到300Ω,而且没有ACX引起的问题出现。

Low resistivity of gate line is very useful for large size panel by overcoming RC delay, also, for small size application with fine pitch process. However, Al-based alloy is not easily contact to ITO metal because of high oxidation rate. This study focused to reducing ACX-ITO contact resistance by increasing nickel composition and room temperature ITO deposition process. By the room temperature ITO deposition process, contact resistance was successfully reduced about 300 Ω and no ACX originated problem was occurred.