摘要
利用水热的方法制备了ITO透明导电薄膜,通过正交试验设计研究镀膜工艺因素对薄膜光电特性的影响规律。试验结果表明:影响薄膜光电性能的主要因素是前驱物浓度,其次是氨水浓度和保温温度,保温时间对薄膜光电性能的影响较小。在采用前驱物浓度为0.5mol/L、氨水浓度为3mol/L、保温温度为160℃、保温时间8h的实验条件下,沉积薄膜的性能较好。
The ITO thin films were prepared by hydrothermal method and the relations between the technological parameters and its properties of optical-electrical were studied. The analysis of orthogonal experiments of technological parameters indicated that precursor concentration, ammonia concentration and hydrothermal temperature had greater influences on the properties of optical-electrical, in contrast to that of the soak time. The experiment showed when precursor concentration was 0. 5mol/L, ammonia concentration was 3 mol/L, hydrothermal temperature was 160 ℃, and soak time was 8 h, the properties of thin films were good.
出处
《液晶与显示》
CAS
CSCD
北大核心
2006年第5期465-468,共4页
Chinese Journal of Liquid Crystals and Displays
基金
国家"863"计划资助项目(No.2003AA32X140)
广西"新世纪十百千人才工程"专项资金(No.2003214)
广西自然基金项目(桂科自0542011)
关键词
ITO薄膜
水热法
正交试验
ITO thin films ； hydrothermal method
orthogonal experiment
