摘要
文章对铌酸锂声表面波SMD的全陶瓷封装中存在的技术难点及解决方法进行了浅析。通过降低温度梯度,环氧树脂中掺入晶态二氧化硅等方法减少作用于LiNbO_3芯片上的应力,解决了LiNbO_3芯片开裂的技术难点,实现了铌酸锂声表面波SMD的全陶瓷封装,并制定了生产工艺流程。
The simple explanations of technology difficulty point and dispose method of the full ceramic packaging of the LiNbO3 SMD. Reducing the stress act on LiNbO3 chip adopting fall temperature grads and intermingle crystal SiO2 in epoxy resin, solved the difficulty of LiNbO3 chip＇s crazing, LiNbO3 SAW SMD full ceramic packaging has came true .And making out the process chart of the packaging.
出处
《电子与封装》
2006年第10期14-16,26,共4页
Electronics & Packaging
