一种新型的分布式MEMS移相器的小型化设计

A Novel Design for the Miniaturization of the DMTL Phase Shifter

通过在共面波导信号线上贴敷低介电常数的薄层绝缘介质,使得MEMS金属桥与共面波导信号线在“关”态下形成MIM电容的方法,实现了提高“关”“开”两种状态下的电容比,从而提高了单位长度上的相移量.与传统的设计方法相比,在达到同样相移量指标的情况下仅需少量的MEMS金属桥就可以实现,工作的可靠性得到提高,未封装MEMS移相器器件的总体尺寸可以减小60%左右,此外由于在“关”态下,金属桥直接贴敷在介质表面上而不会随着外界环境震动,因此移相器的相移精度显著的提高.

Using the method of coating the low dielectric constant thin-layer insulation film on the signal line of the coplanar waveguide, MIM capacitor is formed between the MEMS bridge and signal line, the ratio of the Capacitor of the down state and up state is increased, thus the phase shift of the unit length is raised. Comparing with the traditional design, the same quantity of the phase shift can be achieved with less MEMS bridges, and the size of the naked chip is reduced by about 60%. Besides, the accuracy control of the MEMS phase shifter is also improved a lot for the height of MEMS bridge hard to change under the down state.