新颖的可增强功率处理能力的X-波段RF MEMS开关

A Novel X-Bands RF MEMS Switch with Enhanced Power Handlings

介绍了一种可用于射频系统中的微电子机械开关,通过新颖的三层板结构解决了高功率带来的自执行和自锁效应,并且消除了传统三层板结构引入的应力.采用阻抗匹配的方法提高开关结构的射频性能.利用CoventorWare软件模拟了开关结构的机电特性,利用HFSS软件匹配了开关结构并且模拟了射频性能.开关结构的吸合(pull-in)电压模拟结果为26V.在整个X波段,开关“开”态时的回波损耗低于-28dB,插入损耗小于0.25dB;“关”态时的隔离度大于28dB.

A MEMS switch for RF applications is presented. A novel three plate structure was used to solve RF self actuation and RF latching without adding any stress. The RF performance was improved by matching the characteristic impedance of the switch. The electromechanical characteristic was simulated by CoventorWare and the pull-in voltage is 26 V. The impedance matching and the RF performance of the switch were simulated by HFSS. When the switch is in ＇off＇ state, the return loss is below -28 dB, and the insert loss is less than 0.25 dB at X-bands. The ＇on＇ state switch attains an isolation of more than 28 dB.