摘要
介绍了一种衬底同步加热射频磁控溅射制备BST(BaxSr1-xTiO3)薄膜的新方法,讨论了BST薄膜的晶化效果对介电常数的影响,分析了薄膜的居里温度和εr-V铁电性能.XRD测试结果表明制备的BST薄膜具有完整的钙钛矿晶体结构,相对介电常数超过150,介质击穿强度大于1.3MV/cm.使用这种方法不需要专门的退火工艺,就可以制备晶体结构完整的高介电常数BST薄膜.
This paper introduced a new method of how to sputter BST films which was fabricated by RF magnetron sputtering equipment while the substrate was heated synchronously. The crystallization of BST film affected the dielectric constant and the Curie temperature of BST films and εr-V performance were analysed. The film showed integrated perovskite crystal structure under the XRD test. The relative dielectric constant was over 150 and dielectric strength was larger than 1.3 MV/cm. The results showed that high dielectric constant and low loss BST film can be fabricated using this method without special anneal process.
出处
《传感技术学报》
CAS
CSCD
北大核心
2006年第05B期1904-1906,1910,共4页
Chinese Journal of Sensors and Actuators
关键词
同步衬底加热
射频磁控溅射
钛酸锶钡薄膜
居里温度
ubstrate synchronous heat
RF magnetoelectric sputtering
BST film
Curie temperature
