磁控溅射SiC薄膜及其电学特性研究

The Electronic Properties of SiC Films Deposited by RF Magnetron Sputtering

用磁控溅射法(RMS)制备了SiC微晶薄膜,并对其进行了退火处理。用AFM观察了薄膜的表面形貌,测量了薄膜的厚度、方块电阻和电阻-温度曲线.结果表明:薄膜表面平整光滑;退火处理前后薄膜样品的lnR随1/kT的变化曲线均满足表达式,电子激活能的变化范围为0.0142eV^0.0185eV,且随退火温度的升高而增大;分析确定其导电机理为定域态间近程跳跃电导.退火前后薄膜电阻率的范围为2.4×10-3~4.4×10-3Ω·cm,且随退火温度的升高而增大,与电子激活能的变化趋势一致,这进一步验证了本文提出的薄膜导电机理和激活能随退火温度的变化趋势.

Microcrystal SiC films were prepared by RF-magnetron sputtering technique （RMS） and then annealed. The surface morphology of films was characterized by AFM; The thickness, square-resistance and curves of resistance-temperature were measured. The results show that the surface of films is smooth and compact; The curves of lnR versus 1/kT both before and after annealing processes are satisfied with the expression of R∝△W/kT, where AW is electron excitation energy in the range of 0. 0142 eV to 0. 0185 eV and it has a trend of increasing when the temperature is increased; the resistivity is in the range of 2. 4 × 10^-3 to 4.4× 10.3^-3Ω cm and it has the same trend as electron excitation energy when annealing temperature is increased which further more confirms the electronic mechanism of films and the trend of electron excitation energy versus annealing temperature brought up in this paper.