MEMS应用中的TiN薄膜工艺研究

TiN Membrane for MEMS Applications

运用反应射频溅射的方法进行了TiN薄膜的制备,通过改变关键工艺参数,如氩气氮气比、气体压力等,研究工艺参数对TiN薄膜特性的影响.论文还研究了不同退火工艺条件对薄膜应力的影响,可以实现薄膜低温退火.论文还对TiN的刻蚀和抗腐蚀特性进行了研究,对比了多种湿法对TiN的刻蚀情况,得出常温下TiN具有良好的抗腐蚀特性,并得到干法和湿法刻蚀速率.为TiN材料的MEMS应用打下了基础.

TiN membrane for MEMS applications is studied. The membrane is deposited by reactive RF sputtering, and the influence of critical process parameters, such as ration argon gas to nitrogen gas, gas pressure is investigated. The affection of different annealing process conditions on TiN film stress is also researched, low temperature annealing of film can be realized. Furthermore, the etching and anti-erosion characteristics of TiN film are investigated. Recording to the wet etching results of TiN film, TiN is antierosion in room temperature. Etch rate of SiC film by wet and dry etch techniques are measured. It is ready for MEMS applications.