射频反应溅射制备AlN薄膜的研究

Study of Preparation of AlN Thin Films for FBAR Application by RF Sputtering

采用射频反应磁控溅射制备了高C轴取向的AlN薄膜.在分析Berg迟滞模型的基础上,提出并实现了一种以氮气流量控制反应进程、以阴极电压标识反应进程的高速沉积c轴择优取向AlN薄膜的工艺方法.采用此种方法制备的AlN薄膜,在20W/cm2射频功率密度的情况下沉积速率达到2.3μm/h,远高于有关研究报道数据,获得的AlN薄膜(002)面X-射线衍射峰半高宽仅为0.3°,显示出薄膜具有良好的择优取向.

AIN thin films with high c-axis orientation are deposited by RF reactive magnetron sputtering. Based on the analysis of the Berg hysteresis model, we extend a new control method to quickly depositing AIN thin film with high c-axis oriented. The proposed method identify reactive phases by cathode voltage and control reactive phases by the flow quantity of N2. Under RF power density 20W/cm^2, high c-axis oriented AIN thin film is deposition at 2.3μm/h by RF reactive sputtering. The deposition rate is much higher than ever. Through X-ray diffraction （XRD） analysis, the full width at half maximum （FWHM） of AIN （002） is about 0.3°, which is shown a high c-axis orientation of AIN thin film by （002）.