利用白光干涉原理测量MEMS深槽结构

Measuring MEMS Deep-Trench Structures with White Light Interference

利用白光干涉仪测量形貌,实现对MEMS深槽结构的几何尺寸和三维形貌的分析.实验采用样品为硅栅,测得沟槽的深度为89.78μm,沟槽宽度22.6μm,深宽比为4∶1,得到清晰的三维形貌图.经过对不同沟槽的测量发现,当槽结构的宽大于5μm时,经倾斜一定角度后,可以测得槽的三维形貌.

Based on the theory of white light interference, the geometry dimension and the 3 D topography of MEMS deep-trench can be measured. The sample is the silicon bar. From the analyses the depth of the groove is 89.78μm, the width 22. 6 μm and the depth-to-width radio 4 ： 1, and also the 3 D topography is shown. When completed many measurements on different grooves, it is found that while the width of the groove is more than 5μm, 3 D topography can also be measured when leant some degrees.