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MEMS薄膜平均应力梯度及等效弹性模量在线提取方法 被引量：1

A Method for In-Situ Measuring Average Stress Gradient and Equivalent Elastic Modulus of a MEMS Film
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摘要 薄膜沿厚度方向的平均应力梯度及薄膜的弹性模量对器件性能有重要影响.提出了一种利用静电作用下悬臂梁的吸合电压提取薄膜沿厚度方向的平均应力梯度及等效弹性模量的方法,该方法的关键在于实现悬臂梁吸合电压的快速精确计算.考虑了悬臂梁由应力梯度引起的沿宽度方向的弯曲及实现其固定端接近理想固支的方法,提高了吸合电压的计算精度.实际模拟表明该测量方法计算速度快、精度高,能够应用于实际工艺过程中材料参数的在线测量. The stress gradient along the thickness and the elastic modulus of a MEMS trim have important effects on the performance of related devices. An electrostatically actuated in-situ measuring method for average stress gradient and equivalent elastic modulus of the film is proposed based on pull-in voltages of a set of cantilevers. The key of the measuring method is to realize rapid and accurate calculation of pull-in voltages of the cantilever. To increase the accuracy of the measurement, bending of the cantilever along the width direction due to the stress gradient has been considered, and the method to implement perfect fixed boundary conditions of the cantilever are also taken into account. Actual simulations indicate that the calculating speed and the accuracy of the measuring method are ideal, and the method can apply to in-situ measurement.
作者 戎华 王鸣
机构地区 南京师范大学光电技术江苏省重点实验室
出处 《传感技术学报》 CAS CSCD 北大核心 2006年第05A期1527-1530,共4页 Chinese Journal of Sensors and Actuators
基金 江苏省自然科学基金资助(BK2006223)
关键词 悬臂梁 吸合电压 平均应力梯度 弹性模量 cantilever pull-in voltage average stress gradient elastic modulus
分类号 O484.2 [理学—固体物理] O484.5 [理学—固体物理]
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参考文献12

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同被引文献12

  • 1虞益挺,苑伟政,乔大勇.微机械薄膜残余应力研究[J].微细加工技术,2005(2):46-50. 被引量：9
  • 2[2]KANG Y L,QIU Y,LEI Z K,et al.An Application of Raman Spectroscopy on the Measurement of Residual Stress in Porous Silicon[J].Optics and Lasers in Engineering,2005,43:847-855.
  • 3[4]COSTER J D,TILMANS H A C,TOONDER J M J,at el.Empirical and Theoretical Characterisation of ElectrostaticallyDriven MEMS Structureswith Stress Gradients[J].Sensors and Actuators A,2005,123-124:555-562.
  • 4[5]BENRAKKADA M S,SAMITIEP J,MORANTEA J R,at el.Stress Gradient and Structural Properties of Atmospheric and Reduced Pressure Deposited Polysilieon Layers for Micromechanical Sensors[J].Sensors and Actuators A,1995,51:9-12.
  • 5[6]GREER J R,OLIVER W C,NIX W D.Size Dependence of Mechanical Properties of Gold at the Micron Scale in the Absence of Strain Gradients[J].Acta Materialia,2005,53:1821-1830.
  • 6[7]COSTER J D,TILMANS H A C,TOONDER J M J den,at el.Empirical and Theoretical Charactefisation of Electrostatically Driven MEMS Structures with Stress Gradients[J].Sensors and Actuators A,2005,123-124:555-562.
  • 7[8]FAN L S,MULLER R S,YUN W,at el.Spiral Microstructures for the Measurement of Average Strain Gradients in Thin Films[C].Micro Electro Mechanical Systems,1990.Proceedings,An Investigation of Micro Structures,Sensors,Actuators,Machines and Robots,IEEE:177-180.
  • 8[9]ERICSON F,GREEK S,SODERKVIST J,at el.High-sensitivity Surface Micromachined Structures for Internal Stress and Stress Gradient Evaluation[J].Micromech.Microeng,1997,7:30-36.
  • 9[10]HUANG H,WINCHESTER K,LIU Y,at el.Determination of Mechanical Properties of PECVD Silicon-nitride Thin Films for Tunable MEMS Fabry-Perot Optical Filters[J].Micromech.Microeng,2005,15:608-614.
  • 10[11]LISHCHYNSKA M,CORDERO N,SLATrERY O,at el.Modelling Electrostatic Behaviour of Microcantilevers Incorporating Residual Stress Gradient and Non-ideal Anchors[J].Micromech.Microeng,2005,15:10-14.

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传感技术学报
2006年 第05A期

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