太阳电池用掺氮直拉单晶硅中氧沉淀行为的研究

Investigation of Oxygen Precipitation Behavior in Nitrogen-doped Czochralski Silicon Used for Solar Cells

利用傅立叶红外光谱仪研究了掺氮直拉单晶硅(NCZ)和普通直拉单晶硅(CZ)的原生氧沉淀以及模拟太阳电池制备热处理工艺下的氧沉淀行为。结果发现,掺氮直拉单晶硅的原生氧沉淀浓度比普通直拉单晶硅的略高,这是因为氮在晶体生长过程中可以促进氧沉淀。但是在模拟太阳电池制备热处理工艺中掺氮直拉单晶硅和普通直拉单晶硅一样,没有氧沉淀产生。这表明在太阳电池的短时间热处理工艺中,氮不会对氧沉淀产生影响,不会影响磷吸杂的效果。

The behavior of oxygen precipitates in NCZ silicon during the simulated solar cell thermal process was studied by Fourier Transformation Infrared Ray （FFIR）. It was found that the concentration of as grown oxygen precipitates in NCZ silicon was slightly higher than that of CZ silicon, which suggested that nitrogen could enhance oxygen precipitation during the crystal growth. However, no oxygen precipitates were generated both in NCZ silicon and CZ silicon during the simulated solar cell thermal process, indicating that nitrogen would not affect oxygen precipitates in the short-time process.