基于漏区边界曲率分析的射频RESURF LDMOS耐压与导通电阻优化

Optimization of Breakdown Voltage and On-Resistance Based on the Analysis of the Boundary Curvature of the Drain Region in RF RESURF LDMOS

分析了漏区边界曲率半径与射频RESURFLDMOS击穿电压的关系,指出漏区边界的弯曲对RESURF技术的效果具有强化作用.理论分析与模拟结果表明,满足RESURF条件时,提高漂移区掺杂浓度或掺杂深度的同时相应减小漏区边界的曲率半径,可以在维持击穿电压不变的前提下,明显降低导通电阻.

This paper analyzes the relation between the boundary curvature radius of the drain region and the breakdown voltage of RF RESURF LDMOS. The bending of the curve in the RESURF technology can increase the breakdown voltage greatly. Analysis and simulation prove that the high breakdown voltage and much lower on-resistance in the same device profile can be maintained by an impurity dose or by increasing the thickness of the drift region and reducing boundary curvature radius of the drain region under the REUSRF principle.