摘要
报道了一种新型半绝缘键合SOI结构,采用化学气相淀积加外延生长键合过渡多晶硅层的方法实现了该结构.研制出的这种新结构,完整率大于85%,Si—Si键合界面接触比电阻小于5×10-4Ω·cm2.这种新结构可以广泛用于高低压功率集成电路、高可靠集成电路、MEMS、硅基光电集成等新器件和电路中.
A novel semi-insulation bonding SOI structure that is realized by LPCVD and introducing an epitaxial interim polysilicon layer is reported. The integrality percentage of this new wafer structure is more than 85%. The contact specific resistance of the Si-Si bonding interface is less than 5 × 10^-4Ω· cm^2.It can be widely applied in high-voltage ICs, high-reliability ICs, MEMS, and OEIC.
基金
国家微电子预研资助项目(批准号:41308020413)~~
关键词
硅片键合
半绝缘SOI
多晶过渡层
wafer bonding
semi-insulation SOI
interim polysilicon layer
