摘要
制作了不同结构参数的GaAsMMIC无源元件,包括矩形螺旋电感、MIM电容和薄膜电阻,建立了无源元件的等效电路模型库,采用多项式公式表征无源元件的模型参数和性能参数,便于电路设计的应用.并提取得到MIM电容的单位面积电容值,约为195pF/mm2,NiCr薄膜电阻的方块电阻约为16·1Ω/□.分析结构参数对螺旋电感性能的影响可知,减小线圈面积相关的寄生损耗有助于获得高品质的电感.
Various GaAs MMIC （monolithic microwave integrated circuit） passive components,including rectangle spiral inductors, MIM capacitors,and film resistors, are fabricated,and their equivalent circuit models are established. Various polynomial formulas are introduced to characterize models and performances of different passive components. This is convenient for circuit design. The extracted capacitance per unit area of the MIM capacitors is about 195pF/mm^2 ,and the sheet resistance of the NiCr film resistors is about 16. 1Ω/□. The effects of the geometrical parameters on the spiral inductors are also analyzed,and the results show that reducing the parasitic losses of the inductor areas helps to obtain high quality inductors.
