PZT薄膜的制备及其与MEMS工艺的兼容性

Fabrication of Silicon-Based PZT Films Compatible with MEMS

用溶胶-凝胶技术在Pt/Ti/SiO2/Si上制备了PZT薄膜,并采用剥离技术与热处理的方法解决了Pt电极的图形化,在结晶热处理前,利用PZT腐蚀液对PZT进行图形化腐蚀.分别用SEM,XRD,EDX对电极和PZT薄膜的相貌、相结构以及化学组分进行了分析.结果表明:所制备的PZT薄膜具有完全的钙钛矿型结构;这种图形化的工艺方法大大改善了电极和PZT的图形化条件,在不影响电极和PZT性能的同时,提高了电极和PZT的图形质量;底电极和PZT的图形化过程,避免了强酸长时间的腐蚀,大大提高了PZT薄膜的制备与MEMS工艺的兼容性.

Silicon based PZT films are prepared by the sol-gel process. The electrodes are shaped with the lift-off technique and annealing. The PZT films are patterned by chemical etching before crystallization annealing. The electrodes and PZT films are analyzed by SEM, EDX, and XRD. The results show that the films are in the perovskite phase. The patterning process improves conditions of photolithography and etching,enhances qualities of figures of electrodes and PZT films without reducing their performance. The patterning technology of electrodes and PZT films does not require a long chemical etching process and improves the compatibility of fabrication of PZT films with MEMS.