一类考虑光学邻近效应的片内互连寄生电容提取方法

A parasitic parameter extraction method for on-chip interconnects including the optical proximity effect

大规模集成电路(ULSI)的高速发展使光刻中曝光线条的特征尺寸日益接近曝光系统的理论分辨极限,光学邻近效应可导致实际光刻版图的较大畸变.文中基于BEM和神经网络技术,通过定义等效长度概念,建立了一个计算寄生参数的小型专家系统NNCE,以实现对光刻后实际版图的寄生电容参数的有效提取.一些简单环境中的矩形互连实例被用来比较光刻前后寄生参数的变化,数值模拟表明该方法具有良好的精度.

The quick development of ULSI makes the characteristic size closer to the theoretical differentiability limit of the exposal system. Accordingly, optical proximity effect causes the real photo deviated badly from the mask. A small expert system （NNCE） is set up to calculate parasitic capacitance parameter of rectangle conductors which have been engraved by the so-called Nanoscope, based on BEM and neural network technique. Some simple examples have been compared to show the change of parasitic capacitance before and after being engraved. The results show that the NNCE has good precision.