128×1线列InGaAs短波红外焦平面的研究

STUDY ON 128×1 ELEMENT LINEAR InGaAs SHORT WAVELENTH INFRARED FOCAL PLANE ARRAY

报道了用分子束外延(MBE)方法生长的掺杂InGaAs吸收层PIN InP/InGaAs/InP双异质结外延材料,通过干法刻蚀和湿法腐蚀相结合制作台面、硫化和聚酰亚胺钝化、电极生长等工艺,制备了128×1台面正照射InGaAs探测器阵列.测试了器件的变温I-V、响应光谱和探测率,在278K时平均峰值探测率为1.03×1012cmHz1/2W-1.实现了128元InGaAs探测器阵列与CTIA结构L128读出电路相互连,经封装后,在室温(291K)时成功测出128元响应信号.焦平面响应的不均匀性为18.3%,并对不均匀性产生的原因进行了分析.

Based on doped-InGaAs absorbing layer in MBE-grown p-InP/n-lnGaAs/n-InP double-heterostructure epitaxial materials, 128 × 1 front-illuminated mesa InGaAs detector arrays were made with the technics of mesa-making by dry and wet etching, passivation by sulfidation and polyimide, growth of electrode and so on. 1- V curves, response spectra and detectivity of the devices were measured. The mean peak detectivity of the detectors is 1.03 ×10^12 cmHz^1/2W^-1 at 278K. 128 element InGaAs detector arrays are connect with CTIA-structure L128 read out integrate circuits. The response signals of the 128 elements were successfully measured at room temperature （291K） after packaged. The ununiformity of response is 18.3% , and the reasons of the ununinformity are discussed.