1[1]Tao.J et al.,IEEE Electron Device Letters,1993,14（5）:249—251.
2[2]Robert L.Jackson et al.,Solid State Technology,1998,41（3）:49—59.
3[3]Thomas Taylor et al.,Solid State Technology, 1998,41（11）:47—51.
4[4]Changsup Ryu et al.,IEEE Trans.Electron Devices,1999,46（6）:1113—1120.
5[5]Jon Reid et al.,Solid State Technology,2000,43（7）:86—98.
6Yu Y,et al.Dielectric property and microstructure of a porous polymer material with ultralow dielectric constant[].Applied Physics Letters.1999
7Plant D V,Kirk A G.Optical interconnects at the chip and board level : challenges and solutions[].Proceedings of Tricomm.2000
8Davis J A,Venkatesan R,Kaloyeros A,et al.Interconnect limits on gigascale integration (GSI ) in the 21st century[].Proceedings of Tricomm.2001
9Wu Z C,et al.Electrical reliability issues of integrating thin Ta and TaN barriers with Cu and low-k dielectric[].Journal of the Electrochemical Society.1999
10Chang M F,Roychowdhury V P,Zhang L,et al.RF wireless interconnect for inter-and intra-chip communications[].Proceedings of Tricomm.2001
