摘要
砷化锗镉,CdGeAs2,是三元的黄铜矿类半导体,具有非常高的非线性光学系数(236pm/V),这使得其作为CO2激光器倍频转换方面有突出的优势。长期以来生长晶体时由于存在严重的各向异性而使晶体开裂。砷化锗镉晶体在5.5μm处存在强吸收使得频率转化的效率非常低,此吸收是晶体内存在大量受体缺陷造成的。本文对晶体生长的几种方法和红外吸收进行论述,并提出掺杂予体的方法降低红外吸收。
Cadmium germanium arsenide, CdGeAs2, is a ternary chalcopyrite semiconductor known for the a- and c-axes. CdGeAs2 crystal has a strong absorption at 5.51μm which related to a native acceptor defect, the absorption can decrease the efficient of CdGeAs2 frequency-doubling. This paper reviewed different methods of single crystal growth donor impurities are the main research as well as absorption defect, and pointed out that doping with field for single crystal growth at last
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2006年第5期1022-1025,共4页
Journal of Synthetic Crystals
基金
国家自然科学基金(E50572008)
哈尔滨市科技攻关项目(2005AA5CG058)
关键词
砷化锗镉
开裂
受体缺陷
生长
cadmium germanium arsenide
crack
acceptor-defect
growth
