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蓝宝石衬底上GaN薄膜的结构和光学特性表征 被引量：3

Structural and Optical Properties Characterization of GaN Film Deposited on Sapphire Substrate
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摘要 采用低压金属有机化学气相沉积(LPMOCVD)法,成功地在(0001)晶向的蓝宝石(A l2O3)衬底上制备了高质量的GaN薄膜。并利用X射线衍射(XRD)谱和椭圆偏振光谱(SE)对其结构和光学特性作了表征。XRD谱中,在34.5°和72.9°附近出现了两个尖锐的衍射峰,分析表明这两个衍射峰分别对应纤锌矿(W urtzite)结构GaN薄膜的(0002)和(0004)晶向。其中GaN(0002)晶向衍射峰的半高宽(FWHM)很窄,只有0.1°左右,并且GaN(0004)晶向衍射峰强度很强,二者均证实了采用LPMOCVD法制备的GaN薄膜具有高的质量。在介电函数和反射谱中,GaN高的透明性(<3.44 eV)诱导了强的干涉振荡。室温下拟合出的表征带间跃迁的光学带隙约为3.44 eV。 High-quality GaN film was successfully deposited on （0001）-oriented sapphire substrate by low-pressure metal-organic chemical vapor deposition （LPMOCVD） process. And its structural and optical properties were characterized by XRD, spectroscopic ellipsometry and reflectance spectra. Studied by XRD, the coexistence of strong （0002） diffraction peak with a very narrow FWHM value of 0. 1 degree and high order GaN （0004） diffraction peak confirm the high quality of prepared GaN film. High optical transparency of GaN film induces strong interference oscillations below E0 （3.44 eV ） in the measured dielectric function spectra and reflectance spectra. The fitted E0 value at room temperature is in good agreement with that reported in other papers.
作者 郜小勇 赵剑涛 刘绪伟
机构地区 郑州大学材料物理教育部重点实验室
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2006年第5期1071-1074,共4页 Journal of Synthetic Crystals
基金 国家自然科学基金(No.60277031)
关键词 低压金属有机化学气相沉积 氮化镓 椭圆偏振光谱 干涉效应 LPMOCVD GaN spectroscopic ellipsometry interference effect
分类号 O484 [理学—固体物理]
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参考文献18

  • 1Duboz J Y.GaN as Seen by the Industry[J].Phys.Stat.Sol.(A),1999,176(1):5.
  • 2Monemar B,Pozina G.GroupⅢ-Nitride Based Hetero and Quantum Structures[J].Progr.Quantum Electron,2000,24(6):239.
  • 3Nakamuras S.The Roles of Structural Imperfections in InGaN-Based Diodes,Blue-Light-Emitting Diodes and Laser[J].Science,1998,281(5379):956.
  • 4Kung P,Saxler A,Zhang X,et al.High Quality AlN and GaN Epilayers Grown on (0001) Sapphire,(100),and (111) Silicon Substrates[J].Appl.Phys.Lett,1995,66(22):2958.
  • 5Trampert A,Brandt O,Yang H,et al.Direct Observation of the Initial Nucleation and Epitaxial Growth of Metostable Cubic GaN on (001) GaAs[J].Appl.Phys.Lett,1997,70(5):583.
  • 6Sverdlov B N,Martin G A,Morkoc H,et al.Formation of Threading Defects in GaN Wurtzite Films[J].Appl.Phys.Lett,1995,67(14):2063.
  • 7Guha S,Bojarczuk N.Ultraviolet and Violet GaN Light Emitting Diodes on Silicon[J].Appl.Phys.Lett,1998,72(4):415.
  • 8Steckl A J,Devrajan J,Tran C,et al.SiC Rapid Thermal Carbonization of the (111) Si Semiconductor-on-Insulator Structure and Subsequent Metalorganic Chemical Vapor Deposition[J].Appl.Phys.Lett,1996,69(15):2264.
  • 9Yang J W,Sun C J,Chen Q,et al.High Quality GaN-InGaN Heterostructures Grown on (111) Silicon substrates[J].Appl.Phys.Lett,1996,69(23):3566.
  • 10Kobayashi N P,Kobayashi J T,Dapkus P D,et al.GaN Grown on Si (111) Substrate Using Oxidized AlAs as an Intermediate Layer[J].Appl.Phys.Lett,1997,71(24):3569.

同被引文献28

  • 1张永刚.基于反射谱的GaN薄膜厚度在线测量系统[J].电子质量,2004(12):56-57. 被引量：3
  • 2苏宏波,戴江南,蒲勇,王立,李方,文卿,江风益.生长温度对ZnO薄膜性能的影响[J].Journal of Semiconductors,2006,27(7):1221-1224. 被引量：11
  • 3Corfdir P, Ristic J, Lefebvre P, et al. Low-Temperate Time- Resolved Cathodoluminescence Study of Exciton Dynamics Involving Basal Stacking Faults in a-Plane GaN[J]. Appl Phys Lett,2009,94:201115.
  • 4Jang H W,Lee J L. Origin of the Abnormal Behavior of Contact Resistance in Ohmic Contacts to Laser-Irradiated n-Type GaN[ J]. Appl Phys Lett, 2009,94:182108.
  • 5Jani O, Ferguson I. Design and Characterization of GaN/In- GaN Solar Cells[J]. Appl Phys Lett, 2007,91 : 132117.
  • 6Pinnington T, Koleske D D, Zahler J M, et al. InGaN/GaN Multi-Quantum Well and LED Growth on Wafer-Banded Sapphire-on-Polycrystalline AlN Substrates by Metaloganic Chemical Vapor Deposition[J]. J Crystal Growth,2008,310: 2514 - 2519.
  • 7Sun Q, Cho Y S, Lee I H,et al. Nitrogen-Polar GaN Growth Evolution on c-Plane Sapphire[J].Appl Phys Lett,2008,93: 131912.
  • 8Polyakov A Y, Markov A V, Mezhennyi M V, et al. Nonpolar GaN Grown on Si by Hydride Vapor Phase Epitaxy Using Anodized Al Nanomask[ J]. Appl Phys Lett, 2009,94: 022114.
  • 9Brown D F,Chu R,Keller S,et al. Electrical Properties of N- polar AlGaN/GaN High Electron Mobility Transistors Grown on SiC by Metalorganic Chemical Vapor Deposition[ J]. Appl Plays Lett,2009,94:153506.
  • 10Tang F, Gaire C, Ye D X, et al. AFM, SEM and in situ RHEED Study of Cu Texture Evolution on Amorphous Carbon by Oblique Angle Vapor Deposition[ J] .Physical Review B, 2005,72:035430.

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人工晶体学报
2006年 第5期

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