摘要
本文用化学腐蚀法在多晶硅基片上制作多孔硅,通过SEM、XPS对多孔硅的表面微结构及其组成进行了研究,定性地分析了氧在多孔硅层中的作用及主要热行为。分析了多孔硅用于太阳能电池时应注意的问题:多孔层微孔尺寸、太阳电池工艺中各热处理过程的温度和时间、多孔层与电极材料是否形成欧姆接触及快速热氧化(RTO)的钝化效果。
In this paper we prepared porous silicon with resistivity 1-2Ω·cm by chemical etching method on a P-type polycrystalline silicon substrate. The surface microstructure and components of polycrystalhne porous silicon were measured by SEM and XPS. We qualitatively analyzed the passivation effect and mainthermal behaviors of oxygen in porous silicon. Meanwhile, some problems when the porous silicon is used for antireflection films of solar cells have been discussed: the size of hole, the temperature and time of every thermal process, contact between porous silicon and electrode materials and the effects of oxygen passivation.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2006年第5期1075-1079,共5页
Journal of Synthetic Crystals