直流磁控反应溅射制备(002)择优取向AlN薄膜

Preparation of Preferentially Orientated AlN(002) Thin Film by DC Reactive Magnetron Sputtering

采用直流磁控溅射法,A l靶直径75mm,靶基距9 cm,本底真空3×10-5Pa,气体分压N2/Ar=1/3,工作气压0.2Pa,溅射功率72W,溅射时间1h,溅射过程不加热,使其自然升温,在S i(100)衬底上制备A lN薄膜。结合椭圆偏振仪、X射线衍射(XRD)、X射线光电子能谱(XPS)、扫描电子显微镜(SEM)、原子力显微镜(AFM)等测试手段研究了薄膜特性。结果表明,所制备的多晶A lN薄膜厚度为715nm,具有良好的(002)择优取向,其衍射峰半高宽(FWHM)为0.24°。XPS剥蚀260m in后O的原子浓度降为6.24%,A l和N化学剂量比非常接近1:1。A lN薄膜晶粒大小均匀,平均尺寸为35nm左右。表面粗糙度为0.37nm,表面均方根粗糙度为0.49nm,Z轴方向最高突起约3.13nm。

Aluminum nitride thin film has been successfully deposited on Si（100） substrate using a reactive DC magnetron sputtering system with a 75mm diameter aluminum target, which was positioned at a distance 9cm away from the substrate holder. The base pressure in the deposition chamber was 3×10^-5 Pa and N2/Ar = 1/3. The sputtering pressure is 0.2Pa and DC power is 72W. During deposition the substrate was not intentionally heated and the deposition time was 1 h. The characterization of film is investigated by means of spectroscopic ellipsometry, X-ray diffraction （XRD）, X-ray photoelectron spectroscopy （ XPS）, scanning electron microscopy （SEM） and atomic force microscopy （AFM）. The film shows a excellent preferred orientation of （002） and its FWHM is 0.24°. The atomic concentration of oxygen decreases to 6.24% after 260min etching and Al/N ratio is close to 1 ： 1. The grain size of AlN thin film is uniform and the average grain size is 35nm. Surface of the film is smooth and the resulting surface roughness parameters are ： Ra = 0.37nm, RMS = 0.49nm ,Rz = 3.13nm.