射频磁控溅射透明ZnO薄膜的退火性质分析

Influence of annealing on the properties of the transparent zinc oxide thin film prepared by radio frequency(RF) magnetron sputtering

采用射频（RF）磁控溅射法在玻璃衬底上制备了c轴择优取向的ZnO薄膜。对所制备的ZnO薄膜在空气气氛中进行不同温度（350-600℃）的退火处理。利用XRD研究退火对ZnO薄膜晶体性能和应力状态的影响；用扫描电子显微镜（SEM）观察薄膜的表面形貌；用分光光谱仪测试薄膜的透光率。研究表明，随退火温度的升高，ZnO薄膜（002）衍射峰强度不断增强，半高宽逐渐减小；ZnO薄膜中沿c轴方向存在着的张应力在500℃退火时得到松弛；退火处理后薄膜的平均透光率变化不大，但透射光谱出现了“红移”现象。

The c axis orientation ZnO film was successfully deposited on the glass substrate by the radio frequency（RF） magnetron sputtering technique and annealed at various temperatures ranged from 350 ℃ to 600 ℃ in the air. The effect of annealing on the crystallization, surface morphology and transmittance of the ZnO film was investigated by means of X-ray diffraction （XRD）, the scanning electron microscope（SEM） and the UV-Vis spectrum. The results show that, with the increasing of the annealing temperature, the intensity of （002） diffraction peak becomes stronger and the full width at half the maximum （FWHM） of the （002） diffraction peak decreases gradually, and that the stress along the c axis in the film relaxes when the film is annealed at 500 ℃. After annealing, the transmittance of the film changes little but the ＂red shift＂ phenomenon is observed.