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Structure Dependence of Mode Edges in Photonic Crystal Waveguide with Silicon on Insulator

Structure Dependence of Mode Edges in Photonic Crystal Waveguide with Silicon on Insulator
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摘要 The mode edges of photonic crystal waveguide with triangular lattice based on a silicon-on-insulator slab are investigated by combination of the effective index method and the two-dimensional plane wave expansion method. The variations of waveguide-mode edges with the structure parameters of photonic crystal are deduced. When the ratio of the radius of air holes to the lattice constant, r/ ∧, is fixed and the lattice constant of photonic crystal, A, increases, the waveguide-mode edges shift to longer wavelengths. When A is fixed and r/∧ increases, the waveguide-mode edges shift to shorter wavelengths. Additionally, when r/∧ and A are both fixed, the radius of the two-row air holes adjacent to the waveguide increases, the waveguide-mode edges shift to shorter wavelengths. The mode edges of photonic crystal waveguide with triangular lattice based on a silicon-on-insulator slab are investigated by combination of the effective index method and the two-dimensional plane wave expansion method. The variations of waveguide-mode edges with the structure parameters of photonic crystal are deduced. When the ratio of the radius of air holes to the lattice constant, r/ ∧, is fixed and the lattice constant of photonic crystal, A, increases, the waveguide-mode edges shift to longer wavelengths. When A is fixed and r/∧ increases, the waveguide-mode edges shift to shorter wavelengths. Additionally, when r/∧ and A are both fixed, the radius of the two-row air holes adjacent to the waveguide increases, the waveguide-mode edges shift to shorter wavelengths.
出处 《Chinese Physics Letters》 SCIE CAS CSCD 2006年第11期2999-3002,共4页 中国物理快报(英文版)
基金 Supported by the National Natural Science Foundation of China under Grant Nos 60336010 and 60537010.
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参考文献5

  • 1Inoue K and Ohtaka K 2003 Photonic Crystals Physics,Fabrication and Applications (Berlin: Springer) p 18
  • 2Soljacic M and Joannopoulos D J 2004 Nature Materials 3211
  • 3Sugitatsu A and Noda S 2003 Electron. Lett. 39 213
  • 4Mori D and Baba T 2004 Appl. Phys.Lett. 85 1101
  • 5Tang H X and Wang Q M 2006 Chin. J. Lumin. 27 435

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