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Improved Performances for Organic Light-Emitting Diodes Based on Al2O3-Treated Indium-Tin Oxide Anode 被引量:1

Improved Performances for Organic Light-Emitting Diodes Based on Al2O3-Treated Indium-Tin Oxide Anode
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摘要 Improved performances are obtained in organic light-emitting diodes (OLEDs) based on the indium-tin oxide (ITO) anode processed with ultrasonic in Al2O3 polishing solution. By optimizing the Al2O3 granularity to 0.6μm and the ultrasonic time to 10min, smoother ITO surfaces are acquired, which lead to the enhanced hole injection, and furthermore, to improving the performance of OLEDs. Compared with the control device without any treatment, the drive voltage of treatment device falls from 9 V to 6 V at 100cd/m^2, the luminance is over three times that of the control device, reaching 25880cd/m^2 at 15 V, and the luminous efficiency is 3.82cd/A. Improved performances are obtained in organic light-emitting diodes (OLEDs) based on the indium-tin oxide (ITO) anode processed with ultrasonic in Al2O3 polishing solution. By optimizing the Al2O3 granularity to 0.6μm and the ultrasonic time to 10min, smoother ITO surfaces are acquired, which lead to the enhanced hole injection, and furthermore, to improving the performance of OLEDs. Compared with the control device without any treatment, the drive voltage of treatment device falls from 9 V to 6 V at 100cd/m^2, the luminance is over three times that of the control device, reaching 25880cd/m^2 at 15 V, and the luminous efficiency is 3.82cd/A.
出处 《Chinese Physics Letters》 SCIE CAS CSCD 2006年第11期3094-3096,共3页 中国物理快报(英文版)
基金 Supported by the National Natural Science Foundation of China under Grant Nos 60207003 and 60376028, and the Special Funds for Major State Basic Research Project of China under Grant No 2003CB314703
关键词 BUFFER LAYER ELECTROLUMINESCENT DEVICES CONTACT BUFFER LAYER ELECTROLUMINESCENT DEVICES CONTACT
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