摘要
以Ba0.9Sr0.1TiO3为基,通过Nb5+、Mg2+掺杂改善陶瓷的耐压特性。结果表明:Nb5+、Mg2+复合取代Ti4+使Ba0.9Sr0.1TiO3的居里温度向低温方向移动,宽化了介电峰,提高了陶瓷的击穿场强(Eb)。Ba0.9Sr0.1(Nb2/3Mg1/3)0.04Ti0.96O3在1320℃烧结时,获得了εr为1053,Eb为13MV/m,tanδ为0.01,ρv大于1010?·cm的高压电容器陶瓷。
Nb^5＋, Mg^2＋ were doped into Ba0.9Sr0.1TiO3 to improve the breakdown performance. Results show that when Ti^4＋ is co-replaced by Nb^5＋ and Mg^2＋, Curie temperature of Ba0.9Sr0.1TiO3 moved to lower temperature, dielectric pick became more flatten and breakdown electrical field （Eb） is promoted. High voltage ceramics with εr= 1 053, Eb=13 MV/m, tan δ = 0.01, P v 〉1 010Ω· cm are obtained for Ba0.9Sr0.1（Nb2/3Mg1/3）0.04Ti0.96O3 sintered at 1 320℃.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2006年第11期47-49,共3页
Electronic Components And Materials
基金
浙江省科技计划资助项目(2005C21038)
