溅射气氛对所制备PST/Si薄膜性能的影响

Influence of Sputtering Atmosphere on Growth and Characteristics of(Pb_(1-x)Sr_x)TiO_3 Films

采用高频磁控溅射法制备了Si基（Pb1-xSrx）TiO3系铁电薄膜（以下简称PST／Si）。实验表明，合适的Ar、O2分压比，能保证溅射时挥发出的Pb及时与补充的O离子得以充分化合，确保制备所需成份的PST薄膜。O2分压过高，Au电极中将有大量的O离子严重渗透，从而使PST薄膜介电损耗增加并降低其极化能力。实验中Ar、O2比为5：1的PST／Si样品性能较好，其介电损耗约在0．12～0．21之间，热释电系数约为2．35×10^-2μC／cm^2K。

（Pb1-xSrx）TiO3（PST） ferroeleetrie films were grown by magnetron sputtering on Si substrate. The influence of various growth conditions, such as the partial pressure ratio of Ar and O2 （ Ar/O2 ）, sputtering power and substrate temperature, on the film characteristics was studied. Interesting finding is that an appropriate Ar/O2 ratio promotes full reaction of O ions and Pb atoms;whereas excessive O2 increases dielectric loss and inversely aft＇eels polarization of the films. The results show that Ar/O2 ratio significantly affects the ferroeleetrie properties of the films. For example, the PST/Si films, grown at an Ar/O2 ratio of 5 ： 1, have a dielectric loss between 0. 12 and 0.21 ; and pyroeleetrie coefficient of about 2.35 × 10^-2 μC/cm^2K.