质子辐照与电子辐照对空间GaAs/Ge太阳电池性能影响比较

A COMPARISON OF ELECTRIC PROPERTY CHANGES OF GaAs/Ge SPACE SOLAR CELL IRRADIATED BY PROTON AND ELECTRON

利用地面实验室加速器提供的离子束模拟空间质子、电子辐射,分别对空间实用GaAs/Ge太阳电池进行不同注量的辐照,并跟踪测试其电性能变化和深能级瞬态谱,研究这种太阳电池的电性能参数随质子、电子辐照注量的变化关系,得到质子、电子辐射效应及两者辐射效应的联系规律.结果表明:引起电池性能参数衰降相同时,1 MeV电子辐照注量比10 MeV质子的通常要大3个量级,质子辐照与电子辐照使电池性能参数Pmax下降了25%时,辐照注量有近似关系Φ1 MeV(e)≈2 500×Φ10 MeV(p).10 MeV,3×1012cm-2质子辐照在电池材料中引入Ec-0.18 eV和Ec-0.65 eV深能级,1 MeV,1×1015cm-2电子辐照在电池材料中引入Ec-0.12 eV和Ec-0.18 eV深能级,电子、质子辐照产生的损伤缺陷不尽相同.

The irradiation effects on GaAs/Ge space solar cell are reported. The cells are irradiated by proton and electon at differdent fluences from an accelerator. Then the electric properties and depth level transient spectra are measured. With the increasing proton and electron fluence, the changes of the photovoltaic parameters of solar cells are studied, the proton and electron irradiation effects and relationship are analyzed. It is shown that the electron fluence is about 10^3 times higher than the proton fluence at a same degradation of the electric properties. When the electric parameter Pmax of the solar cell degrades 25%, there exists Ф1 MeV （e）≈2 500× Ф10 MeV （P） between proton irradiation fluence and electron irradiation fluence. The irradiation with 10 MeV proton of 3×10^12 cm^-2 generates deep energy levels Ec-0. 18 eV and Ec-0.65 eV; the irradiation with 1 MeV electron of 2 × 10^15 cm^-2 generates deed energy levels Ec-0.12 eV and Ec-0. 18 eV.