VLSI芯片制备中的多层互连新技术

New Multilayer Copper Interconnect Technologies for VLSI

在简要介绍多层互连材料的基础上,论述了若干种IC芯片制备中的多层互连技术,包括“Cu线+低k双大马士革”多层互连结构、平坦化技术、CMP工艺、“Cu+双大马士革+低k”技术、插塞和金属通孔填充工艺等,并提出了一些多层互连工艺中的关键技术措施。

Based on the introduction of multilayer interconnect materials, more new multilayer interconnect technologies for IC were discussed, including ＇Cu conductor ＋ low-k dielectric dual damascene＇ multilayer interconnect, planarization, CMP, ＇Cu conductor ＋ dual damascene ＋ low-k dielectric＇, filling process of plug or metal contact and so on. And some pivotal techniques were proposed for multilayer interconnect.