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VLSI芯片制备中的多层互连新技术 被引量:1

New Multilayer Copper Interconnect Technologies for VLSI
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摘要 在简要介绍多层互连材料的基础上,论述了若干种IC芯片制备中的多层互连技术,包括“Cu线+低k双大马士革”多层互连结构、平坦化技术、CMP工艺、“Cu+双大马士革+低k”技术、插塞和金属通孔填充工艺等,并提出了一些多层互连工艺中的关键技术措施。 Based on the introduction of multilayer interconnect materials, more new multilayer interconnect technologies for IC were discussed, including 'Cu conductor + low-k dielectric dual damascene' multilayer interconnect, planarization, CMP, 'Cu conductor + dual damascene + low-k dielectric', filling process of plug or metal contact and so on. And some pivotal techniques were proposed for multilayer interconnect.
出处 《半导体技术》 CAS CSCD 北大核心 2006年第11期839-842,共4页 Semiconductor Technology
基金 江苏省高校自然科学研究基金项目(04KJB310171)
关键词 集成电路 铜互连 低K介质 双嵌入(双大马士革)工艺 淀积 化学机械抛光 IC Cu interconnect low-k dielectric dual damascene process deposition CMP
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  • 1黄浩,魏喆良,唐电.半导体金属互连集成技术的进展与趋势[J].金属热处理,2004,29(8):26-31. 被引量:12
  • 2张文彬.100MC锁相环压控振荡器电路设计[J].数字通信,1994,21(1):27-33. 被引量:1
  • 3Tsu-ChangLee,Jason Cong.未来IC中的互连设计[J].电子工程专辑,1998,(3):64-74.
  • 4[2]Ryu C Lee H, Kwon K. Barriers for copper interconnections [J]. Solid State Technology, 1999, 42 (5): 43.
  • 5[3]Alexander E Braun. Copper, Low-K Metrology Scale the Learning Curve [ J ]. Semiconduclor International, June2000, 128-140.
  • 6[4]Victoria Shannon, Sayid C. Smith. Copper Interconnects for Hight-Volume Manufacturing [ J ]. Semiconductor International, May 2001, 92-104.
  • 7[5]Torres J. Copper-based Metallization for VISI circuits [J]. Microelectronic Engineering, 1996, (1): 119-122.
  • 8[7]Timothy W. Ellis, Lee Levine, Rudy Wicen. Emerging Material for Wore Bond Assemhly [J]. Solid State Technology, 2000, (4): 71-75.
  • 9[8]Laura Peter. The New Intensely Competitive Low-K Market [J]. Semiconductor InternationaI, 2001, (5): 13.
  • 10[9]Jaimes A. Cunningham. Using Electrochemistry to Improve Copper Interconnects [ J]. Semiconduc tor International,May 2000, (5), 97-102.

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  • 1CAMPBELL S A.微电子制造科学原理与工程技术[M].北京:电子工业出版社,2005:330-332.
  • 2GOUDEAU P, VILLAIN P, GIRARDEAU T,et al. Elastic constants investigation by X-ray diffraction of in situ deformed metallic multi-layers [J] .Thin Solid Films ,2004,50(6) :723-727.
  • 3孙卯秋.肖特基二极管多层金属化技术[J].济南大学学报(社会科学版),1999,10(5):47-49. 被引量:6

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